SMALL-ANGLE CLEAVAGE OF SEMICONDUCTORS FOR TRANSMISSION ELECTRON-MICROSCOPY

被引：63

作者：

MCCAFFREY, JP

机构：

[1] Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ont. K1A 0R6, Montreal Rd. Labs

来源：

ULTRAMICROSCOPY | 1991年 / 38卷 / 02期

关键词：

D O I：

10.1016/0304-3991(91)90116-N

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

A small-angle cleavage technique has been developed that produces significantly improved TEM samples of semiconductors and related materials. These samples do not exhibit amorphous surface layers or thermal damage in cross-sectional (XTEM) samples, or preferentially thinned regions in XTEM heterostructures as is typical of samples prepared by conventional atom milling. Using this technique, TEM samples can be produced in approximately one hour using standard laboratory equipment.

引用

页码：149 / 157

页数：9

共 16 条

[1] CROSS-SECTIONAL SPECIMENS FOR TRANSMISSION ELECTRON-MICROSCOPY [J].

ABRAHAMS, MS ;

BUIOCCHI, CJ .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) :3315-3316

[2]

ALAI R, 1990, MATER RES SOC S P, V199, P85

[3]

BOONE T, 1988, MATER RES SOC S P, V115, P81

[4] THE PREPARATION OF CROSS-SECTION SPECIMENS FOR TRANSMISSION ELECTRON-MICROSCOPY [J].

BRAVMAN, JC ;

SINCLAIR, R .

JOURNAL OF ELECTRON MICROSCOPY TECHNIQUE, 1984, 1 (01) :53-61

[5] IODINE ION MILLING OF INDIUM-CONTAINING COMPOUND SEMICONDUCTORS [J].

CHEW, NG ;

CULLIS, AG .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :142-144

[6]

DENHOFF MW, 1991, J APPL PHYS, V70

[7]

DEVEIRMAN A, 1988, MATER RES SOC S P, V115, P241

[8]

HETHERINGTON CJD, 1988, MATER RES SOC S P, V115, P143

[9]

Klepeis S.J., 1988, MAT RES SOC S P, V115, P179

[10] NEW PREPARATION METHOD FOR LARGE AREA ELECTRON-TRANSPARENT SILICON SAMPLES [J].

KOLBESEN, BO ;

MAYER, KR ;

SCHUH, GE .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1975, 8 (03) :197-199

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