INSITU OPTICAL MONITORING OF GROWTH-RATE AND SURFACE-ROUGHNESS OF YBA2CU3O7-Y FILMS IN CHEMICAL VAPOR-DEPOSITION

被引：11

作者：

HIGASHIYAMA, K ^{[1
]}

HIRABAYASHI, I ^{[1
]}

TANAKA, S ^{[1
]}

机构：

[1] INT SUPERCOND TECHNOL CTR,SUPERCOND RES LAB,ATSUTA KU,NAGOYA 456,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 7A期

关键词：

CVD; YBA2CU3O7-Y; SUPERCONDUCTING THIN FILM; LASER; REFLECTIVITY; INTERFERENCE; GROWTH RATE; SURFACE ROUGHNESS;

D O I：

10.1143/JJAP.31.L835

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An optical method for in situ monitoring of film thickness has been applied to growth of YBa2Cu3O7-y films by chemical vapor deposition. Reflectivity change is monitored at an incident angle of 78-degrees from the film growing on MgO(100) substrate. An oscillation in the reflection intensity resulting from interference inside the YBa2Cu3O7-y layer is observed with the deposition time. The deposition rate calculated from the oscillation frequency agrees well with the value estimated from chemical analysis of the film. Increase of CuO precipitate with increasing Cu content in the film results in a corresponding decrease of the reflection intensity due to the scattering of laser light at the film surface. Therefore, this simple method provides an effective means for growth control of superconducting thin film by chemical vapor deposition.

引用

页码：L835 / L838

页数：4

共 7 条

[1] OPTICAL-REFLECTANCE AND ELECTRON-DIFFRACTION STUDIES OF MOLECULAR-BEAM-EPITAXY GROWTH TRANSIENTS ON GAAS(001) [J].

ASPNES, DE ;

HARBISON, JP ;

STUDNA, AA ;

FLOREZ, LT .

PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1687-1690

[2] TEMPERATURE-DEPENDENCE OF OPTICAL-EXCITATIONS IN YBA2CU3O6, SMBA2CU3O6 [J].

HUMLICEK, J ;

GARRIGA, M ;

CARDONA, M .

SOLID STATE COMMUNICATIONS, 1988, 67 (06) :589-592

[3] OPTICAL INVESTIGATION ON THE GROWTH-PROCESS OF GAAS DURING MIGRATION-ENHANCED EPITAXY [J].

KOBAYASHI, N ;

HORIKOSHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11) :L1880-L1882

[4] INSITU OPTICAL MONITORING OF THE GAAS GROWTH-PROCESS IN MOCVD [J].

MAKIMOTO, T ;

YAMAUCHI, Y ;

KOBAYASHI, N ;

HORIKOSHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (02) :L207-L209

[5] LAYER-BY-LAYER EPITAXIAL-GROWTH OF A BI2SR2CUO6 THIN-FILM ON A BI2SR2CACU2O8 SINGLE-CRYSTAL [J].

MATSUMOTO, T ;

KAWAI, T ;

KITAHAMA, K ;

KAWAI, S ;

SHIGAKI, I ;

KAWATE, Y .

APPLIED PHYSICS LETTERS, 1991, 58 (18) :2039-2041

[6]

PICKERING C, 1987, MATER RES SOC S P, V94, P173

[7]

TERASHIMA T, 1991, 3RD P INT S SUP ISS9, P851

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