ALGAAS BELOW HALF BANDGAP - THE SILICON OF NONLINEAR-OPTICAL MATERIALS

被引:60
作者
STEGEMAN, GI
VILLENEUVE, A
KANG, J
AITCHISON, JS
IRONSIDE, CN
ALHEMYARI, K
YANG, CC
LIN, CH
LIN, HH
KENNEDY, GT
GRANT, RS
SIBBETT, W
机构
[1] UNIV GLASGOW,DEPT ELECTR & ELECT ENGN,GLASGOW G12 8QQ,LANARK,SCOTLAND
[2] PENN STATE UNIV,DEPT ELECT & COMP ENGN,UNIVERSITY PK,PA 16802
[3] NATL TAIWAN UNIV,DEPT ELECT ENGN,TAIPEI 10764,TAIWAN
[4] UNIV ST ANDREWS,DEPT PHYS & ASTRON,ST ANDREWS KY16 9SS,FIFE,SCOTLAND
来源
INTERNATIONAL JOURNAL OF NONLINEAR OPTICAL PHYSICS | 1994年 / 3卷 / 03期
关键词
D O I
10.1142/S0218199194000213
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Very few nonlinear optical materials are actually useful for high throughput all-optical devices. However, AlGaAs does satisfy all of the nonlinear optical figures of merit when used with photons of energy less than one half the semiconductor bandgap. Here we review our measurements of the pertinent nonlinear coefficients in waveguides and various device applications to all-optical switching in the communications band around 1550 nm.
引用
收藏
页码:347 / 371
页数:25
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