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AN OPEN TUBE METHOD OF ZN DIFFUSION IN III-V-COMPOUNDS
被引:19
作者
:
PHATAK, SB
论文数:
0
引用数:
0
h-index:
0
PHATAK, SB
机构
:
来源
:
ELECTRON DEVICE LETTERS
|
1982年
/ 3卷
/ 05期
关键词
:
D O I
:
10.1109/EDL.1982.25511
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:132 / 134
页数:3
相关论文
共 8 条
[1]
PREVENTION OF INP SURFACE DECOMPOSITION IN LIQUID-PHASE EPITAXIAL-GROWTH
ANTYPAS, GA
论文数:
0
引用数:
0
h-index:
0
ANTYPAS, GA
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(01)
: 64
-
65
[2]
SHALLOW AND SELECTIVE DIFFUSION OF ZINC IN INDIUM-PHOSPHIDE
AYTAC, S
论文数:
0
引用数:
0
h-index:
0
AYTAC, S
SCHLACHETZKI, A
论文数:
0
引用数:
0
h-index:
0
SCHLACHETZKI, A
[J].
SOLID-STATE ELECTRONICS,
1981,
24
(01)
: 57
-
&
[3]
ZINC ION-IMPLANTATION AS A PREDEPOSITION PROCESS IN GALLIUM-ARSENIDE
BOISSY, MC
论文数:
0
引用数:
0
h-index:
0
机构:
RTC La Radiotechnique Compelec
BOISSY, MC
DIGUET, D
论文数:
0
引用数:
0
h-index:
0
机构:
RTC La Radiotechnique Compelec
DIGUET, D
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(09)
: 1505
-
1509
[4]
FAVENNEC PN, 1980, ELECTRON LETT, V10, P832
[5]
OPEN TUBE DIFFUSION OF ZINC IN GALLIUM-ARSENIDE
SHEALY, JR
论文数:
0
引用数:
0
h-index:
0
SHEALY, JR
BALIGA, BJ
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BALIGA, BJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
GHANDHI, SK
[J].
ELECTRON DEVICE LETTERS,
1980,
1
(06):
: 119
-
121
[6]
EFFECT OF IMPURITY DIFFUSION ON THE CHARACTERISTICS OF AVALANCHE PHOTO-DIODE
TAKANASHI, Y
论文数:
0
引用数:
0
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0
TAKANASHI, Y
HORIKOSHI, Y
论文数:
0
引用数:
0
h-index:
0
HORIKOSHI, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(04)
: 687
-
691
[7]
CONTROL OF ZN DOPING FOR GROWTH OF INP PN JUNCTION BY LIQUID-PHASE EPITAXY
WADA, O
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
WADA, O
MAJERFELD, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
MAJERFELD, A
ROBSON, PN
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
ROBSON, PN
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(10)
: 2278
-
2284
[8]
A NEW APPARATUS FOR MULTILAYER GROWTH BY CHEMICAL VAPOR-DEPOSITION - THE SLIDING-BOAT CLOSE-SPACED TECHNIQUE
YOSHIKAWA, A
论文数:
0
引用数:
0
h-index:
0
YOSHIKAWA, A
YOSHIHARA, S
论文数:
0
引用数:
0
h-index:
0
YOSHIHARA, S
KASAI, H
论文数:
0
引用数:
0
h-index:
0
KASAI, H
NISHIMAKI, M
论文数:
0
引用数:
0
h-index:
0
NISHIMAKI, M
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(08)
: 732
-
734
←
1
→
共 8 条
[1]
PREVENTION OF INP SURFACE DECOMPOSITION IN LIQUID-PHASE EPITAXIAL-GROWTH
ANTYPAS, GA
论文数:
0
引用数:
0
h-index:
0
ANTYPAS, GA
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(01)
: 64
-
65
[2]
SHALLOW AND SELECTIVE DIFFUSION OF ZINC IN INDIUM-PHOSPHIDE
AYTAC, S
论文数:
0
引用数:
0
h-index:
0
AYTAC, S
SCHLACHETZKI, A
论文数:
0
引用数:
0
h-index:
0
SCHLACHETZKI, A
[J].
SOLID-STATE ELECTRONICS,
1981,
24
(01)
: 57
-
&
[3]
ZINC ION-IMPLANTATION AS A PREDEPOSITION PROCESS IN GALLIUM-ARSENIDE
BOISSY, MC
论文数:
0
引用数:
0
h-index:
0
机构:
RTC La Radiotechnique Compelec
BOISSY, MC
DIGUET, D
论文数:
0
引用数:
0
h-index:
0
机构:
RTC La Radiotechnique Compelec
DIGUET, D
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(09)
: 1505
-
1509
[4]
FAVENNEC PN, 1980, ELECTRON LETT, V10, P832
[5]
OPEN TUBE DIFFUSION OF ZINC IN GALLIUM-ARSENIDE
SHEALY, JR
论文数:
0
引用数:
0
h-index:
0
SHEALY, JR
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
BALIGA, BJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
GHANDHI, SK
[J].
ELECTRON DEVICE LETTERS,
1980,
1
(06):
: 119
-
121
[6]
EFFECT OF IMPURITY DIFFUSION ON THE CHARACTERISTICS OF AVALANCHE PHOTO-DIODE
TAKANASHI, Y
论文数:
0
引用数:
0
h-index:
0
TAKANASHI, Y
HORIKOSHI, Y
论文数:
0
引用数:
0
h-index:
0
HORIKOSHI, Y
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(04)
: 687
-
691
[7]
CONTROL OF ZN DOPING FOR GROWTH OF INP PN JUNCTION BY LIQUID-PHASE EPITAXY
WADA, O
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
WADA, O
MAJERFELD, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
MAJERFELD, A
ROBSON, PN
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
ROBSON, PN
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(10)
: 2278
-
2284
[8]
A NEW APPARATUS FOR MULTILAYER GROWTH BY CHEMICAL VAPOR-DEPOSITION - THE SLIDING-BOAT CLOSE-SPACED TECHNIQUE
YOSHIKAWA, A
论文数:
0
引用数:
0
h-index:
0
YOSHIKAWA, A
YOSHIHARA, S
论文数:
0
引用数:
0
h-index:
0
YOSHIHARA, S
KASAI, H
论文数:
0
引用数:
0
h-index:
0
KASAI, H
NISHIMAKI, M
论文数:
0
引用数:
0
h-index:
0
NISHIMAKI, M
[J].
APPLIED PHYSICS LETTERS,
1980,
37
(08)
: 732
-
734
←
1
→