EPITAXIAL-GROWTH OF BP COMPOUNDS ON SI SUBSTRATES USING B2H6-PH3-H2 SYSTEM

被引:55
作者
SHOHNO, K [1 ]
TAKIGAWA, M [1 ]
NAKADA, T [1 ]
机构
[1] SOPHIA UNIV,DEPT ELECTR,CHIYODA,TOKYO,JAPAN
关键词
D O I
10.1016/0022-0248(74)90303-0
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:193 / 196
页数:4
相关论文
共 7 条
[1]   OPTICAL ABSORPTION ELECTROLUMINESCENCE + BAND GAP OF BP [J].
ARCHER, RJ ;
LOEBNER, EE ;
KOYAMA, RY ;
LUCAS, RC .
PHYSICAL REVIEW LETTERS, 1964, 12 (19) :538-&
[2]   CRYSTALS AND EPITAXIAL LAYERS OF BORON PHOSPHIDE [J].
CHU, TL ;
JACKSON, JM ;
HYSLOP, AE ;
CHU, SC .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) :420-&
[3]  
KINOSHITA T, 1970, OYO BUTURI, V39, P788
[4]   UNIT CELL, SPACE GROUP AND COMPOSITION OF A LOWER BORON PHOSPHIDE [J].
MATKOVICH, V .
ACTA CRYSTALLOGRAPHICA, 1961, 14 (01) :93-&
[5]  
NISHINAGA T, 1970, J CRYST GROWTH, V13, P346
[6]   HETEROEPITAXIAL GROWTH OF LOWER BORON PHOSPHIDE ON SILICON SUBSTRATE USING PH3-B2H6-H2 SYSTEM [J].
TAKIGAWA, M ;
HIRAYAMA, M ;
SHOHNO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (10) :1504-1509
[7]  
WANG CC, 1964, RCA REV, V25, P195