NONLINEAR-ANALYSIS OF A CMOS INTEGRATED SILICON PRESSURE SENSOR

被引：25

作者：

SUZUKI, K ^{[1
]}

ISHIHARA, T ^{[1
]}

HIRATA, M ^{[1
]}

TANIGAWA, H ^{[1
]}

机构：

[1] NEC CORP,DIV SYST LSI DEV,KAWASAKI,KANAGAWA 213,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/T-ED.1987.23092

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1360 / 1367

页数：8

共 15 条

[1] SILICON INTEGRATED STRAIN-GAGE TRANSDUCER WITH HIGH LINEARITY [J].

BRETSCHI, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (01) :59-61

[2]

HIRATA M, 1985, JUN TRANSD 85, P287

[3]

ISHIHARA T, 1986, MAY P IEEE CUST INT, P34

[4] PIEZORESISTANCE OF DUFFUSED LAYERS IN CUBIC SEMICONDUCTORS [J].

KERR, DR ;

MILNES, AG .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (04) :727-&

[5]

NISHIHARA M, 1985, J SOC INSTRUM CONTR, V21, P813

[6] SEMICONDUCTING STRESS TRANSDUCERS UTILIZING TRANSVERSE AND SHEAR PIEZORESISTANCE EFFECTS [J].

PFANN, WG ;

THURSTON, RN .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (10) :2008-&

[7]

SUZUKI K, 1985, DEC INT EL DEV M, P137

[8]

SUZUKI K, 1985, 5TH P SENS S, P159

[9]

SUZUKI K, 1984, IECE ED8456 PAP TECH

[10] MOS INTEGRATED SILICON PRESSURE SENSOR [J].

TANIGAWA, H ;

ISHIHARA, T ;

HIRATA, M ;

SUZUKI, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (07) :1191-1195

← 1 2 →