MOS INTEGRATED SILICON PRESSURE SENSOR

被引：39

作者：

TANIGAWA, H

ISHIHARA, T

HIRATA, M

SUZUKI, K

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 07期

关键词：

D O I：

10.1109/T-ED.1985.22099

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1191 / 1195

页数：5

共 16 条

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[3]

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[6] HIGH-SPEED NMOS OPERATIONAL-AMPLIFIER FABRICATED USING VLSI TECHNOLOGY [J].

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AIZAWA, T .

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[9] SILICON AS A MECHANICAL MATERIAL [J].

PETERSEN, KE .

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[10]

REICHL H, 1983, MAY P SOL STAT TRANS, P86

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