AN IR SENSITIVE, REAL-TIME IMAGING TECHNIQUE BASED ON A PHOTO-ELECTROCHEMICAL CELL

被引:2
作者
MICHEELS, RH
RAUH, RD
机构
关键词
D O I
10.1063/1.93097
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:433 / 435
页数:3
相关论文
共 9 条
[1]  
Belyakov L. V., 1974, Soviet Physics - Technical Physics, V19, P837
[2]   LASER-PHOTOINDUCED ETCHING OF SEMICONDUCTORS AND METALS [J].
HAYNES, RW ;
METZE, GM ;
KREISMANIS, VG ;
EASTMAN, LF .
APPLIED PHYSICS LETTERS, 1980, 37 (04) :344-346
[4]   PHOTOELECTROCHROMIC CHARACTERISTICS OF PHOTOELECTROCHEMICAL IMAGING-SYSTEM WITH A SEMICONDUCTOR-SOLUTION (METALLIC ION) JUNCTION [J].
INOUE, T ;
FUJISHIMA, A ;
HONDA, K .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) :1582-1588
[5]   PHOTOELECTROCHEMICAL IMAGING PROCESSES USING SEMICONDUCTOR ELECTRODES [J].
INOUE, T ;
FUJISHIMA, A ;
HONDA, K .
CHEMISTRY LETTERS, 1978, (11) :1197-1200
[6]   PHOTOELECTROCHEMICAL DEPOSITION OF MICROSCOPIC METAL-FILM PATTERNS ON SI AND GAAS [J].
MICHEELS, RH ;
DARROW, AD ;
RAUH, RD .
APPLIED PHYSICS LETTERS, 1981, 39 (05) :418-420
[7]   PHOTOELECTROCHEMICAL ETCHING OF PARA-GAAS [J].
OSTERMAYER, FW ;
KOHL, PA .
APPLIED PHYSICS LETTERS, 1981, 39 (01) :76-78
[8]  
RAUH RD, 1980, 3 Q TECH PROG REP
[9]   SEMICONDUCTOR ELECTRODES .25. P-GAAS-HEPTYL VIOLOGEN SYSTEM - PHOTOELECTROCHEMICAL CELLS AND PHOTO-ELECTROCHROMIC DISPLAYS [J].
REICHMAN, B ;
FAN, FRF ;
BARD, AJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) :333-338