ELECTRICAL-PROPERTIES OF HALOGEN LAMP RECRYSTALLIZED SILICON FILMS ON SIO2

[1] ELECTRON-MOBILITY EMPIRICALLY RELATED TO PHOSPHORUS CONCENTRATION IN SILICON [J]. SOLID-STATE ELECTRONICS, 1975, 18 (06) : 579 - 580

[2] Chantre A., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P325

[3] VACANCY-DIFFUSION MODEL FOR QUENCHED-IN E-CENTERS IN CW-LASER ANNEALED VIRGIN SILICON [J]. PHYSICA B & C, 1983, 116 (1-3): : 547 - 552

[4] CHANTRE A, 1983, DEFECTS SEMICONDUCTO

[5] GROWTH OF LARGE AREAS OF GRAIN BOUNDARY-FREE SILICON-ON-INSULATOR [J]. ELECTRONICS LETTERS, 1983, 19 (23) : 985 - 986

[6] USE OF SELECTIVE ANNEALING FOR GROWING VERY LARGE GRAIN SILICON ON INSULATOR FILMS [J]. APPLIED PHYSICS LETTERS, 1982, 41 (04) : 346 - 347

[7] TECHNIQUES FOR PRODUCING DEFECT-FREE SOI BY DUAL ELECTRON-BEAM HEATING OF DEPOSITED POLYSILICON [J]. JOURNAL DE PHYSIQUE, 1983, 44 (NC-5): : 337 - 341

[8] MICROANALYSIS OF SINGLE-CRYSTAL SI RECRYSTALLIZED USING HALOGEN LAMPS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) : 3892 - 3896

[9] Johnson N. M., 1983, Laser-Solid Interactions and Transient Thermal Processing of Materials, P491

[10] Kamgar A., 1982, Materials Letters, V1, P91, DOI 10.1016/0167-577X(82)90016-7

[1] ELECTRON-MOBILITY EMPIRICALLY RELATED TO PHOSPHORUS CONCENTRATION IN SILICON [J]. SOLID-STATE ELECTRONICS, 1975, 18 (06) : 579 - 580

[2] Chantre A., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P325

[3] VACANCY-DIFFUSION MODEL FOR QUENCHED-IN E-CENTERS IN CW-LASER ANNEALED VIRGIN SILICON [J]. PHYSICA B & C, 1983, 116 (1-3): : 547 - 552

[4] CHANTRE A, 1983, DEFECTS SEMICONDUCTO

[5] GROWTH OF LARGE AREAS OF GRAIN BOUNDARY-FREE SILICON-ON-INSULATOR [J]. ELECTRONICS LETTERS, 1983, 19 (23) : 985 - 986

[6] USE OF SELECTIVE ANNEALING FOR GROWING VERY LARGE GRAIN SILICON ON INSULATOR FILMS [J]. APPLIED PHYSICS LETTERS, 1982, 41 (04) : 346 - 347

[7] TECHNIQUES FOR PRODUCING DEFECT-FREE SOI BY DUAL ELECTRON-BEAM HEATING OF DEPOSITED POLYSILICON [J]. JOURNAL DE PHYSIQUE, 1983, 44 (NC-5): : 337 - 341

[8] MICROANALYSIS OF SINGLE-CRYSTAL SI RECRYSTALLIZED USING HALOGEN LAMPS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) : 3892 - 3896

[9] Johnson N. M., 1983, Laser-Solid Interactions and Transient Thermal Processing of Materials, P491

[10] Kamgar A., 1982, Materials Letters, V1, P91, DOI 10.1016/0167-577X(82)90016-7