GROWTH OF (111)CDTE ON GAAS/SI AND SI SUBSTRATES FOR HGCDTE EPITAXY

(111) CdTe has been grown on both GaAs/Si and Si by hot wall epitaxy. X-ray diffraction, photoluminescence, and defect etching indicate that these layers are of high crystalline quality. For CdTe grown on GaAs/Si, full width at half-maximum of x-ray rocking curves as low as 59 arcsec have been obtained whereas for CdTe grown on Si, x-ray linewidths as narrow as 315 arcsec have been obtained. HgCdTe grown on (111)B CdTe/GaAs/Si by metalorganic chemical vapor deposition is very smooth and devoid of the many defects that plague other orientations.