19.1-PERCENT EFFICIENT SILICON SOLAR-CELL

[1] BLAKERS AW, 1984, IEEE ELECTRON DEVICE, V5

[2] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[3] HIGH-EFFICIENCY P+-N-N+ BACK-SURFACE-FIELD SILICON SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (03) : 238 - 240

[4] Green M.A., 1982, SOLAR CELLS OPERATIN

[5] ENHANCEMENT OF SCHOTTKY SOLAR CELL EFFICIENCY ABOVE ITS SEMIEMPIRICAL LIMIT [J]. APPLIED PHYSICS LETTERS, 1975, 27 (05) : 287 - 288

[6] GREEN MA, 1982, 16TH P IEEE PHOT SPE, P1219

[7] DEPENDENCE OF EFFICIENCY OF SHALLOW JUNCTION SILICON SOLAR-CELLS ON SUBSTRATE DOPING [J]. JOURNAL OF ENERGY, 1981, 5 (01): : 9 - 14

[8] HIGH-YIELD PHOTOLITHOGRAPHIC TECHNIQUE FOR SURFACE WAVE DEVICES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) : 821 - &

[9] 1977, ERDANASA10227716 REP

[1] BLAKERS AW, 1984, IEEE ELECTRON DEVICE, V5

[2] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[3] HIGH-EFFICIENCY P+-N-N+ BACK-SURFACE-FIELD SILICON SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (03) : 238 - 240

[4] Green M.A., 1982, SOLAR CELLS OPERATIN

[5] ENHANCEMENT OF SCHOTTKY SOLAR CELL EFFICIENCY ABOVE ITS SEMIEMPIRICAL LIMIT [J]. APPLIED PHYSICS LETTERS, 1975, 27 (05) : 287 - 288

[6] GREEN MA, 1982, 16TH P IEEE PHOT SPE, P1219

[7] DEPENDENCE OF EFFICIENCY OF SHALLOW JUNCTION SILICON SOLAR-CELLS ON SUBSTRATE DOPING [J]. JOURNAL OF ENERGY, 1981, 5 (01): : 9 - 14

[8] HIGH-YIELD PHOTOLITHOGRAPHIC TECHNIQUE FOR SURFACE WAVE DEVICES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) : 821 - &

[9] 1977, ERDANASA10227716 REP