LOW-ENERGY MOTT POLARIMETRY OF ELECTRONS FROM NEGATIVE ELECTRON-AFFINITY PHOTOCATHODES

被引:28
作者
CICCACCI, F [1 ]
DEROSSI, S [1 ]
CAMPBELL, DM [1 ]
机构
[1] UNIV EDINBURGH,DEPT PHYS,EDINBURGH EH9 3JZ,MIDLOTHIAN,SCOTLAND
关键词
D O I
10.1063/1.1145364
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We present data on the spin polarization P and quantum yield Y of electrons photoemitted from negative electron affinity semiconductors, including GaAs(100), GaAsP(100) alloy, and strained GaAs layer epitaxially grown on a GaAsP(100) buffer. Near photothreshold the following values for P(Y) are, respectively, obtained: 26% (2.5X10(-2)), 40% (1X10(-3)), and 60% (1.5x10(-4)). We describe in detail the apparatus used containing a low energy (10-25 keV) Mott polarimeter. The system, completely fitted in a small volume (similar to 10(4) cm(3)) ultrahigh vacuum chamber, is intended as a test facility for characterizing candidate photocathode materials for spin polarized electron sources. (C) 1995 American Institute of Physics.
引用
收藏
页码:4161 / 4165
页数:5
相关论文
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