LOW-TEMPERATURE MODIFICATIONS IN THE DEFECT STRUCTURE OF AMORPHOUS-SILICON PROBED BY IN-SITU RAMAN-SPECTROSCOPY

被引：18

作者：

BATTAGLIA, A

COFFA, S

PRIOLO, F

COMPAGNINI, G

BARATTA, GA

机构：

[1] IST METODOL & TECNOL MICROELETTON,I-95129 CATANIA,ITALY

[2] CITTA UNIV CATANIA,OSSERVATORIO ASTROFIS,I-95125 CATANIA,ITALY

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 16期

关键词：

D O I：

10.1063/1.110553

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The modifications occurring in the defect structure of ion implanted amorphous silicon below room temperature have been probed by Raman spectroscopy. Amorphous silicon layers were irradiated at 77 K by 3 keV He+ ions and analyzed in situ by Raman spectroscopy. This low-temperature ion irradiation produces a shift in the transversal optical (TO) peak position from 471 to 463 cm-1 and a broadening in its halfwidth from 43 to 50 cm-1. Moreover after an annealing at 300 K the vibrational properties come back to their initial state. It is speculated that the modifications induced by low-temperature ion irradiation are associated with the production and annihilation of highly mobile defects.

引用

页码：2204 / 2206

页数：3

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