PRESSURE AND TEMPERATURE-DEPENDENCE OF ELECTRONIC-ENERGY LEVELS IN PBSE AND PBTE

被引：89

作者：

SCHLUTER, M

MARTINEZ, G

COHEN, ML

机构：

[1] UNIV CALIF, DEPT PHYS, BERKELEY, CA 94720 USA

[2] LAWRENCE BERKELEY LAB, INORG MAT RES DIV, BERKELEY, CA 94720 USA

来源：

PHYSICAL REVIEW B | 1975年 / 12卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.12.650

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：650 / 658

页数：9

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