LOW-THRESHOLD INGAASP BURIED-CRESCENT STOP-CLEAVED LASERS FOR MONOLITHIC INTEGRATION

被引：2

作者：

ANTREASYAN, A

CHEN, CY

LOGAN, RA

机构：

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 09期

关键词：

D O I：

10.1049/el:19850287

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：404 / 405

页数：2

共 7 条

[1]

ANTREASYAN A, 1985, UNPUB APPL PHYS 0515

[2] ALGAAS LASERS WITH MICRO-CLEAVED MIRRORS SUITABLE FOR MONOLITHIC INTEGRATION [J].

BLAUVELT, H ;

BARCHAIM, N ;

FEKETE, D ;

MARGALIT, S ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1982, 40 (04) :289-290

[3] GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET [J].

COLDREN, LA ;

IGA, K ;

MILLER, BI ;

RENTSCHLER, JA .

APPLIED PHYSICS LETTERS, 1980, 37 (08) :681-683

[4] HIGH-QUANTUM-EFFICIENCY LOW-THRESHOLD MICROCLEAVED ALXGA1-XAS LASERS [J].

LEVINE, BF ;

VANDERZIEL, JP ;

LOGAN, RA ;

BETHEA, CG .

ELECTRONICS LETTERS, 1982, 18 (16) :690-691

[5]

LOGAN RA, 1983, P LOS ALAMOS C OPTIC, P181

[6] GAAS INTEGRATED OPTICAL CIRCUITS BY WET CHEMICAL ETCHING [J].

MERZ, JL ;

LOGAN, RA ;

SERGENT, AM .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (02) :72-82

[7] ALGAAS/GAAS MICROCLEAVED FACET (MCF) LASER MONOLITHICALLY INTEGRATED WITH PHOTO-DIODE [J].

WADA, O ;

YAMAKOSHI, S ;

FUJII, T ;

HIYAMIZU, S ;

SAKURAI, T .

ELECTRONICS LETTERS, 1982, 18 (05) :189-190

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