DOPANT-SURFACE MIGRATION AND INTERACTIONS FROM REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DYNAMICS

被引：20

作者：

WOOD, CEC ^{[1
]}

机构：

[1] LAB PHYS SCI,COLLEGE PK,MD 20740

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 04期

关键词：

D O I：

10.1063/1.351210

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of silicon and beryllium atom coverage on the intensity of electrons specularly reflected from vicinal (100) GaAs is reported. Intensities typically drop to minima when concentrations approach gallium step-site densities, and increase to broad maxima associated with changes in dominant reconstruction order. Transient relaxation effects are also reported together with possible applications to surface migration kinetics, dopant flux calibrations, and determination of misorientation angles.

引用

页码：1760 / 1763

页数：4