INVERSE-PHOTOEMISSION SPECTROSCOPY OF THE UNRECONSTRUCTED, IDEALLY H-TERMINATED SI(111) SURFACE

被引：41

作者：

BOUZIDI, S

COLETTI, F

DEBEVER, JM

THIRY, PA

DUMAS, P

CHABAL, YJ

机构：

[1] FAC UNIV NOTRE DAME PAIX,INTERDISCIPLINAIRE SPECT ELECTR LAB,B-5000 NAMUR,BELGIUM

[2] LASIR,F-94320 THIAIS,FRANCE

[3] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.45.1187

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The chemically prepared H/Si(111)-(1X1) surface has been studied by k-resolved inverse-photoemission spectroscopy (KRIPES) along the two main directions (GAMMABAR KBAR and GAMMABAR MBAR) of the surface Brillouin zone. Two conduction bands are evident at 2.6 and 4.0 eV at GAMMABAR and displays some dispersion. A marked asymmetry is observed in their dispersion along the MBAR GAMMABAR MBAR direction. This asymmetry is a manifestation of the different contributions of the eigenstates associated with k parallel and -k parallel to the KRIPES cross sections.

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页码：1187 / 1192

页数：6

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