THE NATURE OF SEVERAL INTENSE SI-H INFRARED STRETCHING PEAKS IN THE NEUTRON-TRANSMUTATION-DOPED SI-H SYSTEM

Our experiments show that there are four, three, two and one hydrogen atoms involved in the defect complexes corresponding to the 2210 cm-1, 2066 cm-1, 1980 cm-1 and 1832 cm-1 infrared (IR) peaks, respectively, in the neutron-transmutation-doped floating-zone silicon (NTD FZ-Si) system. On the basis of the correlation of the thermostability and the oscillator frequency with the number of hydrogen atoms involved in these IR peaks, we attribute the 2210 cm-1, 2066 cm-1, 1980 cm-1 and 1832 cm-1 IR peaks to the the vancancyt +4H, vacancy+3H, vacancy+2H and vacancy+1H defect complexes, respectively. The mechanism of the formation of the vacancy+nH defect complexes in the NTD FZ-Si:H system has been discussed.