ELECTRON FOCUSING IN 2-DIMENSIONAL ELECTRON GASES GROWN ON (311)B GAAS SUBSTRATES

被引:2
作者
CHURCHILL, AC
KIM, GH
SIMMONS, MY
RITCHIE, DA
JONES, GAC
机构
[1] Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, Madingley Road
来源
PHYSICAL REVIEW B | 1994年 / 50卷 / 23期
关键词
D O I
10.1103/PhysRevB.50.17636
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a study of electron focusing in two-dimensional electron gases grown on (311)-orientated GaAs substrates. The electronic properties of electron and hole gases grown on (311)-orientated GaAs substrates have anisotropic behavior in the orthogonal [2̄33] and [011̄] directions, however, the electron focusing results presented demonstrate anisotropic effective mass and Fermi surface even though the mobility is anisotropic. We also determine the ballistic length for the electrons. © 1994 The American Physical Society.
引用
收藏
页码:17636 / 17638
页数:3
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