POSSIBILITY OF GUNN EFFECT IN INHOMOGENEOUS SEMICONDUCTORS

被引：2

作者：

DAS, P

MAROM, E

机构：

来源：

PHYSICS LETTERS | 1966年 / 20卷 / 05期

关键词：

D O I：

10.1016/0031-9163(66)90942-5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：444 / &

共 8 条

[1] MICROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS [J].

GUNN, JB .

[2] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J].

GUNN, JB .

[3] PHENOMENOLOGICAL ASPECTS OF CW MICROWAVE OSCILLATIONS IN GaAs [J].

Hakki, B. W. ;

Knight, S. .

[4] MECHANISM OF GUNN EFFECT FROM A PRESSURE EXPERIMENT [J].

HUTSON, AR ;

JAYARAMAN, AG ;

CHYNOWETH, AG ;

CORIELL, AS ;

FELDMAN, WL .

[5] THEORY OF GUNN EFFECT [J].

KROEMER, H .

[6] CURRENT OSCILLATIONS IN CADMIUM SULFIDE [J].

MCLEOD, BR ;

HAYES, RE .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (11) :1772-&

[7] SPECIFIC NEGATIVE RESISTANCE IN SOLIDS [J].

RIDLEY, BK .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (530) :954-&

[8]

STRATTON R, 1958, P PHYS SOC LONDON, VA246, P406