PHOTOEXCITATION EFFECTS ON SCANNING TUNNELING MICROSCOPE IMAGES OF SURFACE OXIDE LAYER OF TITANIUM

被引：12

作者：

SUGIMURA, H ^{[1
]}

KITAMURA, N ^{[1
]}

MASUHARA, H ^{[1
]}

机构：

[1] RES DEV CORP JAPAN, ERATO PROGRAM, MICROPHOTOCONVERS PROJECT, SAKYO KU, KYOTO 606, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 10B期

关键词：

SCANNING TUNNELING MICROSCOPY; TITANIUM DIOXIDE; TITANIUM; PHOTOEXCITATION EFFECT; SEMICONDUCTOR;

D O I：

10.1143/JJAP.31.L1506

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Scanning tunneling microscopy (STM) was applied to observe a surface oxide layer of titanium in air. When a sample bias voltage was set at -0.2 V, the STM tip penetrated into the surface oxide damaged the sample, while clear and stable images of the surface TiO2 layer were obtained under photoexcitation. The results were discussed in terms of enhanced electric conductivity of the oxide layer under photoexcitation.

引用

页码：L1506 / L1508

页数：3

共 11 条

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