DEPENDENCE OF PHOTOCONDUCTIVE AND PHOTOELECTROMAGNETIC EFFECTS ON SLAB THICKNESS IN INSB AT ROOM-TEMPERATURE

被引：11

作者：

HANUS, W ^{[1
]}

OSZWALDOWSKI, M ^{[1
]}

机构：

[1] INST ELECTR TECHNOL,PL-87100 TORUN,POLAND

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 36卷 / 02期

关键词：

D O I：

10.1002/pssa.2210360203

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：445 / 452

页数：8

共 16 条

[1] SPECTRAL DISTRIBUTION OF THE PHOTOMAGNETOELECTRIC EFFECT IN GE - EXPERIMENT [J].

BRAND, FA ;

BAKER, AN ;

METTE, H .

PHYSICAL REVIEW, 1960, 119 (03) :922-925

[2] SPECTRAL DISTRIBUTION OF THE PHOTOMAGNETOELECTRIC EFFECT IN SEMICONDUCTORS - THEORY [J].

GARTNER, W .

PHYSICAL REVIEW, 1957, 105 (03) :823-829

[3] INFRARED ABSORPTION AND VALENCE BAND IN INDIUM ANTIMONIDE [J].

GOBELI, GW ;

FAN, HY .

PHYSICAL REVIEW, 1960, 119 (02) :613-620

[4]

GRINBERG AA, 1960, FIZ TVERD TELA, V2, P836

[5] PROPERTIES OF P-TYPE INDIUM ANTIMONIDE .2. PHOTOELECTRIC PROPERTIES AND CARRIER LIFETIME [J].

HILSUM, C .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 74 (475) :81-86

[6]

Hilsum C., 1961, SEMICONDUCTING 3 5 C

[7] INDIUM ANTIMONIDE PHOTOELECTROMAGNETIC INFRARED DETECTOR [J].

KRUSE, PW .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (05) :770-778

[8] PHOTOCONDUCTIVE AND PHOTOELECTROMAGNETIC EFFECTS IN INSB [J].

KURNICK, SW ;

ZITTER, RN .

JOURNAL OF APPLIED PHYSICS, 1956, 27 (03) :278-285

[9]

Moss TS., 1959, OPTICAL PROPERTIES S

[10]

OSZWALDOWSKI M, 1971, P INT C PHYSICS CHEM, V3, P219

← 1 2 →