AVALANCHE AMPLIFICATION OF MULTIPLE RESONANT-TUNNELING THROUGH PARALLEL SILICON MICROCRYSTALLITES

被引:11
作者
BOERINGER, DW
TSU, R
机构
[1] University of North Carolina at Charlotte, Charlotte
关键词
D O I
10.1103/PhysRevB.51.13337
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Current-voltage measurements of resonant tunneling through nanoscale silicon particles reveal large current staircases. These current jumps are sharper than what would be expected considering feature smearing due to a distribution of particle sizes and are surprisingly large (fivefold increase in current). This situation is now understood. The sharpness of the current jumps comes from the action of tunneling through a few groups of particles of different sizes connected in parallel, and the magnitude of the current jumps results from substrate avalanche multiplication of the small injected resonant-tunneling current. © 1995 The American Physical Society.
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页码:13337 / 13343
页数:7
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