PULSED-LASER ABLATION DEPOSITION OF CUINSE2 AND CUIN1-XGAXSE2 THIN-FILMS

被引：28

作者：

LEVOSKA, J ^{[1
]}

LEPPAVUORI, S ^{[1
]}

WANG, F ^{[1
]}

KUSMARTSEVA, O ^{[1
]}

HILL, AE ^{[1
]}

AHMED, E ^{[1
]}

TOMLINSON, RD ^{[1
]}

PILKINGTON, RD ^{[1
]}

机构：

[1] UNIV SALFORD,DEPT ELECTR & ELECT ENGN,SALFORD M5 4WT,LANCS,ENGLAND

来源：

PHYSICA SCRIPTA | 1994年 / 54卷

关键词：

D O I：

10.1088/0031-8949/1994/T54/060

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

CuInSe2 (CIS) and CuIn0.75Ga0.25Se2 (CIGS) thin films were deposited by an in situ process on fused silica and silicon (100) and (111) substrates by pulsed laser ablation using an XeCl excimer laser and polycrystalline targets. The effect of deposition temperature and substrate material on the structure and orientation of the films was investigated. The structure of the films was studied by X-ray diffraction, and their chemical composition was investigated by energy dispersive X-ray analysis on a scanning electron microscope. The composition of the target material was largely maintained in the films deposited below 450 degrees C. On fused silica and Si (111) substrates, the films were highly oriented with the (112) planes of the chalcopyrite structure along the substrate surface. The films deposited on to Si (100) developed, under some conditions, {100} orientation and epitaxy.

引用

页码：244 / 247

页数：4

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