FUNDAMENTAL REFLECTION OF CDXHG1-XTE CRYSTALS IN 1.9 TO 3.1 EV ENERGY-RANGE

[1] BASSANI F, 1966, P INT SCH PHYSICS EN

[2] FUNDAMENTAL REFLECTIVITY AND BAND STRUCTURE OFZNTE,CDTE, AND HGTE [J]. PHYSICAL REVIEW, 1963, 131 (01): : 98 - +

[3] ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J]. PHYSICAL REVIEW, 1967, 154 (03): : 696 - +

[4] PREPARATION OF CDXHG1-XTE CRYSTALS BY VERTICAL-ZONE MELTING METHOD [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) : 104 - &

[5] CONDUCTION BAND STRUCTURE OF CD.01HG0.9TE [J]. PHYSICA STATUS SOLIDI, 1967, 20 (01): : 113 - &

[6] FUNDAMENTAL REFLECTIVITY SPECTRUM OF CDXHG1-XTE CRYSTALS FROM 1.5-EV TO 4-EV [J]. PHYSICA STATUS SOLIDI, 1969, 34 (01): : 63 - &

[7] GALAZKA RR, 1963, ACTA PHYS POL, V24, P791

[8] INVESTIGATION OF SPECTRA OF LIGHT REFLECTED OFF CDXHG1-XTE THIN-FILMS [J]. THIN SOLID FILMS, 1974, 21 (02) : 231 - 236

[9] Kisiel A., 1970, Acta Physica Polonica A, VA38, P691

[10] Kisiel A., 1971, Acta Physica Polonica A, VA39, P245

[1] BASSANI F, 1966, P INT SCH PHYSICS EN

[2] FUNDAMENTAL REFLECTIVITY AND BAND STRUCTURE OFZNTE,CDTE, AND HGTE [J]. PHYSICAL REVIEW, 1963, 131 (01): : 98 - +

[3] ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J]. PHYSICAL REVIEW, 1967, 154 (03): : 696 - +

[4] PREPARATION OF CDXHG1-XTE CRYSTALS BY VERTICAL-ZONE MELTING METHOD [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) : 104 - &

[5] CONDUCTION BAND STRUCTURE OF CD.01HG0.9TE [J]. PHYSICA STATUS SOLIDI, 1967, 20 (01): : 113 - &

[6] FUNDAMENTAL REFLECTIVITY SPECTRUM OF CDXHG1-XTE CRYSTALS FROM 1.5-EV TO 4-EV [J]. PHYSICA STATUS SOLIDI, 1969, 34 (01): : 63 - &

[7] GALAZKA RR, 1963, ACTA PHYS POL, V24, P791

[8] INVESTIGATION OF SPECTRA OF LIGHT REFLECTED OFF CDXHG1-XTE THIN-FILMS [J]. THIN SOLID FILMS, 1974, 21 (02) : 231 - 236

[9] Kisiel A., 1970, Acta Physica Polonica A, VA38, P691

[10] Kisiel A., 1971, Acta Physica Polonica A, VA39, P245