EFFECT OF ANNEALING ON HYDROGENATED AMORPHOUS-SILICON PREPARED AT HIGH DEPOSITION RATE

被引：8

作者：

HAMASAKI, T

UEDA, M

CHAYAHARA, A

HIROSE, M

OSAKA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 02期

关键词：

D O I：

10.1143/JJAP.23.L81

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：L81 / L82

页数：2

相关论文

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