AN INTEGRATED SILICON MAGNETIC-FIELD SENSOR USING THE MAGNETODIODE PRINCIPLE

被引：19

作者：

POPOVIC, RS ^{[1
]}

BALTES, HP ^{[1
]}

RUDOLF, F ^{[1
]}

机构：

[1] CTR ELECTR HORLOGER,CH-2000 NEUCHATEL 7,SWITZERLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 03期

关键词：

D O I：

10.1109/T-ED.1984.21516

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：286 / 291

页数：6

共 25 条

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[4]

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SIGEL, GH ;

WEST, EJ ;

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[6]

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[7]

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[8]

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[9] HIGHLY LINEAR GAAS HALL DEVICES FABRICATED BY ION-IMPLANTATION [J].

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ZAMA, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (01) :78-82

[10]

KARAKUSHAN EI, 1961, SOV PHYS-SOL STATE, V3, P493

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