STEERING EFFECT AT A STRAINED NISI2/SI (001) INTERFACE

In a 700 A thick NiSi//2 epitaxial film grown on Si (001), tensile strain due to the lattice mismatch was observed by means of 1. 0-3. 5 Mev He ion channeling angular scans about three different off-normal channeling axes in major planes, i. e. left bracket 111 right bracket in (11 OVER BAR 0), left bracket 112 right bracket in (11 OVER BAR 0) and left bracket 011 right bracket in (100). Because of angular misalignment between the NiSi//2 and the Si substrate (Si(sub)) off-normal channeling axes, peculiar behaviors of channeled ions were observed in the Si(sub) angular scan profiles. Namely, at ion incident angles corresponding to the NiSi//2 axes, the Si(sub) yield showed no energy dependence.