METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF ZNO USING D2O AS OXIDANT

被引：13

作者：

WENAS, WW ^{[1
]}

YAMADA, A ^{[1
]}

KONAGAI, M ^{[1
]}

TAKAHASHI, K ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 3A期

关键词：

D2O; ZNO; TRANSPARENT CONDUCTING OXIDE; SURFACE MORPHOLOGY;

D O I：

10.1143/JJAP.33.L283

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnO films with low resistivity and high transparency in a wavelength range of 400 nm-1300 nm were successfully grown by the metalorganic chemical vapor deposition (MOCVD) technique using D2O as a new oxidant for diethylzinc on glass substrates. It was also found that the crystal orientation of the films was strongly dependent on the substrate temperature. By employing both D2O ad H2O as oxidants for diethylzinc, the surface morphology of low-resistivity ZnO films could be modified. The obtained films are suitable as transparent conducting materials.

引用

页码：L283 / L285

页数：3

共 7 条

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