THEORY OF BAND-POPULATION EFFECTS IN ELECTROREFLECTANCE

被引：16

作者：

BOTTKA, N ^{[1
]}

JOHNSON, DL ^{[1
]}

机构：

[1] USN,WEAP CTR,MICHELSON LAB,CHINA LAKE,CA 93555

来源：

PHYSICAL REVIEW B | 1975年 / 11卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.11.2969

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2969 / 2978

页数：10

共 26 条

[1] ENERGY AND LIFETIME OF SPACE-CHARGE-INDUCED LOCALIZED STATES [J].

ALFERIEFF, ME ;

DUKE, CB .

PHYSICAL REVIEW, 1968, 168 (03) :832-+

[2] ANALYSIS OF MODULATION SPECTRA OF STRATIFIED MEDIA [J].

ASPNES, DE .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1973, 63 (11) :1380-1390

[3] INFLUENCE OF SPATIALLY DEPENDENT PERTURBATIONS ON MODULATED REFLECTANCE AND ABSORPTION OF SOLIDS [J].

ASPNES, DE ;

FROVA, A .

SOLID STATE COMMUNICATIONS, 1969, 7 (01) :155-159

[4]

ASPNES DE, 1972, SEMICONDUCTORS SEMIM, V9, P468

[5] EFFECT OF ELECTRIC AND MAGNETIC-FIELD ON SELF-CONSISTENT POTENTIAL AT SURFACE OF A DEGENERATE SEMICONDUCTOR [J].

BARAFF, GA ;

APPELBAUM, JA .

PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :475-+

[6]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P75

[7] EFFECT OF PHOTOCARRIERS ON SURFACE BARRIER ELECTROREFLECTANCE IN MOS CAPACITOR CONFIGURATIONS [J].

BOTTKA, N .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (12) :5626-5628

[8] ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].

BURSTEIN, E .

PHYSICAL REVIEW, 1954, 93 (03) :632-633

[9] OPTICAL ABSORPTION DUE TO SPACE-CHARGE-INDUCED LOCALIZED STATES [J].

DUKE, CB .

PHYSICAL REVIEW, 1967, 159 (03) :632-+

[10] BAND-POPULATION EFFECTS IN ELECTROREFLECTANCE SPECTRUM OF INSB [J].

GLOSSER, R ;

SERAPHIN, BO .

PHYSICAL REVIEW, 1969, 187 (03) :1021-&

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