N-TYPE GAAS PHOTO-ANODES IN ACETONITRILE - DESIGN OF A 10.0-PERCENT EFFICIENT PHOTO-ELECTRODE

被引：35

作者：

GRONET, CM

LEWIS, NS

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 01期

关键词：

D O I：

10.1063/1.94148

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：115 / 117

页数：3

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