PHOTOEMISSION OF VERY THIN AG LAYERS ON (111) SI

被引：19

作者：

WEHKING, F ^{[1
]}

BECKERMANN, H ^{[1
]}

NIEDERMAYER, R ^{[1
]}

机构：

[1] RUHR UNIV BOCHUM,INST EXP PHYS 4,D-4630 BOCHUM,FED REP GER

来源：

THIN SOLID FILMS | 1976年 / 36卷 / 02期

关键词：

D O I：

10.1016/0040-6090(76)90019-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：265 / 268

页数：4

共 9 条

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[2] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS [J].

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[3]

Eastman DE., 1972, ELECTRON SPECTROSCOP, P487

[4]

HARTIG K, 1976, THESIS BOCHUM

[5] METHOD FOR DETERMINATION OF TRANSMISSION FUNCTION OF ELECTRON SPECTROMETERS [J].

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LECKEY, RCG ;

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JENKIN, JG .

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[6] SURFACE AND BULK CONTRIBUTIONS TO ULTRAVIOLET PHOTOEMISSION SPECTRA OF SILICON [J].

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IBACH, H .

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[7] PHOTOEMISSION STUDIES OF CUXAG1-X ALLOYS [J].

SHEVCHIK, NJ ;

GOLDMANN, A .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 5 (NOV-D) :631-640

[8] UNTERSUCHUNGEN ZUM SCHICHTWACHSTUM VON SILBER AUF DER SILIZIUM(111)-OBERFLACHE DURCH BEUGUNG LANGSAMER ELEKTRONEN [J].

SPIEGEL, K .

SURFACE SCIENCE, 1967, 7 (02) :125-&

[9]

WEHKING F, 1972, PROGR VACUUM MICROBA, V1, P25

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