TRANSMISSION ELECTRON-MICROSCOPY AND PHOTOLUMINESCENCE STUDY OF SILICON AND BORON ION-IMPLANTED GAAS/GAALAS QUANTUM-WELLS

被引：5

作者：

ARAKAWA, Y

SMITH, JS

YARIV, A

OTSUKA, N

CHOI, C

GU, BP

VENKATESAN, T

机构：

[1] CALTECH,PASADENA,CA 91125

[2] PURDUE UNIV,W LAFAYETTE,IN 47907

[3] BELL COMMUN RES INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 02期

关键词：

D O I：

10.1063/1.97829

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：92 / 94

页数：3

共 9 条

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APPLIED PHYSICS LETTERS, 1983, 42 (02) :185-187

[2] DISORDER OF AN ALAS-GAAS SUPER-LATTICE BY SILICON IMPLANTATION [J].

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APPLIED PHYSICS LETTERS, 1982, 40 (10) :904-906

[3] GAALAS BURIED MULTIQUANTUM WELL LASERS FABRICATED BY DIFFUSION-INDUCED DISORDERING [J].

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SEMURA, S ;

SAITO, H ;

OHTA, T ;

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APPLIED PHYSICS LETTERS, 1984, 45 (01) :1-3

[4] IMPLANTATION DISORDERING OF ALXGA1-XAS SUPERLATTICES [J].

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DEPPE, DG ;

MEEHAN, K ;

HOLONYAK, N ;

COLEMAN, JJ ;

BURNHAM, RD .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :130-132

[5] DISORDER OF AN INXGA1-XAS-GAAS SUPER-LATTICE BY ZN DIFFUSION [J].

LAIDIG, WD ;

LEE, JW ;

CHIANG, PK ;

SIMPSON, LW ;

BEDAIR, SM .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6382-6384

[6]

LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

[7]

Mazey D. J., 1969, Radiation Effects, V1, P229, DOI 10.1080/00337576908235565

[8] TEM STRUCTURAL STUDIES ON SE+ IMPLANTED GAAS [J].

SADANA, DK ;

BOOKER, GR .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 42 (1-2) :35-43

[9] INTERMIXING OF AN ALAS-GAAS SUPER-LATTICE BY ZN DIFFUSION [J].

VANVECHTEN, JA .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :7082-7084

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