ADSORPTION OF H2O AND H2S ON THE (100) SURFACE OF SILICON - A THEORETICAL-STUDY

被引：2

作者：

BARONE, V ^{[1
]}

LELJ, F ^{[1
]}

RUSSO, N ^{[1
]}

TOSCANO, M ^{[1
]}

机构：

[1] UNIV CALABRIA,DIPARTIMENTO CHIM,I-87030 ARCAVACATA,ITALY

来源：

JOURNAL DE CHIMIE PHYSIQUE ET DE PHYSICO-CHIMIE BIOLOGIQUE | 1987年 / 84卷 / 06期

关键词：

D O I：

10.1051/jcp/1987840799

中图分类号：

Q5 [生物化学]; Q7 [分子生物学];

学科分类号：

071010 ; 081704 ;

摘要：

引用

页码：799 / 803

页数：5

共 27 条

[1] MODEL HAMILTONIANS IN THE STUDY OF CHEMISORPTION AND CATALYSIS [J].

ABBATE, G ;

BARONE, V ;

LELJ, F ;

IACONIS, E ;

RUSSO, N .

SURFACE SCIENCE, 1985, 152 (APR) :690-701

[2] ELECTRON-ENERGY LOSS SPECTROSCOPY OF H2S ADSORBED ON NI(100) [J].

BACA, AG ;

SCHULZ, MA ;

SHIRLEY, DA .

JOURNAL OF CHEMICAL PHYSICS, 1984, 81 (12) :6304-6309

[3] CHEMISORPTION OF ATOMIC AND MOLECULAR-OXYGEN ON THE (100) SURFACE OF SILICON - A THEORETICAL-STUDY [J].

BARONE, V ;

LELJ, F ;

RUSSO, N ;

TOSCANO, M .

SURFACE SCIENCE, 1985, 162 (1-3) :230-238

[4] ULTRAVIOLET PHOTOELECTRON-SPECTROSCOPY, AUGER-ELECTRON SPECTROSCOPY, LOW-ENERGY ELECTRON-DIFFRACTION AND FLASH-DESORPTION STUDIES OF THE CHEMISORPTION AND DECOMPOSITION OF H2S AND H2O ON W(100) [J].

BHATTACHARYA, AK ;

CLARKE, LJ ;

DELAGARZA, LM .

JOURNAL OF THE CHEMICAL SOCIETY-FARADAY TRANSACTIONS I, 1981, 77 :2223-&

[5] HYDRIDE FORMATION ON THE SI(100)-H2O SURFACE [J].

CHABAL, YJ .

PHYSICAL REVIEW B, 1984, 29 (06) :3677-3680

[6] EVIDENCE OF DISSOCIATION OF WATER ON THE SI(100)2X1 SURFACE [J].

CHABAL, YJ ;

CHRISTMAN, SB .

PHYSICAL REVIEW B, 1984, 29 (12) :6974-6976

[7] SPECIES-SPECIFIC DENSITIES OF STATES OF GA AND AS IN THE CHEMISORPTION OF H2O ON GAAS(110) [J].

CHILDS, KD ;

LUO, WA ;

LAGALLY, MG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :593-596

[8] STATES OF WATER MOLECULE ADSORBED ON SI(111) SURFACE [J].

CIRACI, S ;

ERKOC, S ;

ELLIALIOGLU, S .

SOLID STATE COMMUNICATIONS, 1983, 45 (01) :35-38

[9] DISSOCIATION OF WATER-MOLECULES ON SI SURFACES [J].

CIRACI, S ;

WAGNER, H .

PHYSICAL REVIEW B, 1983, 27 (08) :5180-5183

[10] THEORY OF OFF-CENTER IMPURITIES IN SILICON - SUBSTITUTIONAL NITROGEN AND OXYGEN [J].

DELEO, GG ;

FOWLER, WB ;

WATKINS, GD .

PHYSICAL REVIEW B, 1984, 29 (06) :3193-3207

← 1 2 3 →