SUBSTITUTIONAL DOPING OF AMORPHOUS-SILICON - A COMPARISON OF DIFFERENT DOPING MECHANISMS

被引：22

作者：

MULLER, G ^{[1
]}

MANNSPERGER, H ^{[1
]}

KALBITZER, S ^{[1
]}

机构：

[1] MAX PLANCK INST NUCL PHYS,D-6900 HEIDELBERG 1,FED REP GER

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1986年 / 53卷 / 04期

关键词：

D O I：

10.1080/01418638608244287

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：257 / 268

页数：12

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