共 6 条
[1]
BUEHLER MG, 1966, SEL66064 STANF RES R
[2]
DOPING AND RADIATION-DAMAGE PROFILES OF P+IONS IMPLANTED IN SILICON ALONG [110] AXIS
[J].
RADIATION EFFECTS AND DEFECTS IN SOLIDS,
1974, 21 (04)
:255-264
[3]
TECHNIQUE TO OBTAIN DEEP PENETRATING OHMIC CONTACTS FOR ELECTRICAL MEASUREMENTS ON ION-IMPLANTED SILICON
[J].
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS,
1974, 7 (09)
:698-700
[4]
DEARNALEY G., 1973, ION IMPLANTATION
[5]
GIBBONS JF, 1975, PROJECTED RANGE STAT
[6]
RESTELLI R, 1973, NUCL INSTRUM METHODS, V112, P581