INJECTION DEPENDENCE OF QUASIBALLISTIC TRANSPORT IN GAAS AT 77K

被引：12

作者：

HESTO, P

机构：

来源：

SURFACE SCIENCE | 1983年 / 132卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(83)90564-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：623 / 636

页数：14

共 13 条

[1] MONTE-CARLO PARTICLE SIMULATION OF GAAS SUB-MICRON N+-I-N+ DIODE [J].

AWANO, Y ;

TOMIZAWA, K ;

HASHIZUME, N ;

KAWASHIMA, M .

ELECTRONICS LETTERS, 1982, 18 (03) :133-135

[2]

BRU C, 1982, UNPUB P WORKSHOP PHY

[3] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[4]

EASTMAN LF, 1982, J PHYSIQUE S, V42

[5] A PROPOSAL AND NUMERICAL-SIMULATION OF N+NN+ SCHOTTKY DEVICE FOR BALLISTIC AND QUASI-BALLISTIC ELECTRON-SPECTROSCOPY [J].

HESTO, P ;

PONE, JF ;

CASTAGNE, R .

APPLIED PHYSICS LETTERS, 1982, 40 (05) :405-406

[6]

HESTO P, 1982, J PHYSIQUE S, V42

[7] VELOCITY-FIELD CHARACTERISTICS OF GAAS WITH GAMMA-6(C)-L6(C)-X6(C) CONDUCTION-BAND ORDERING [J].

LITTLEJOHN, MA ;

HAUSER, JR ;

GLISSON, TH .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) :4587-4590

[8]

MALONEY TJ, 1977, J APPL PHYS, V48, P783

[9]

RODE DL, 1975, SEMICONDUCTORS SEMIM, V10

[10] TEMPERATURE DEPENDENCE OF TRANSPORT PROPERTIES OF GALLIUM ARSENIDE DETERMINED BY A MONTE-CARLO METHOD [J].

RUCH, JG ;

FAWCETT, W .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3843-&

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