IMPROVED LINEARITY AND KINK CRITERIA FOR 1.3-MU-M INGAASP-INP CHANNELED SUBSTRATE BURIED HETEROSTRUCTURE LASERS

被引：10

作者：

DUTTA, NK

WILT, DP

BESOMI, P

DAUTREMONTSMITH, WC

WRIGHT, PD

NELSON, RJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 05期

关键词：

D O I：

10.1063/1.94826

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：483 / 485

页数：3

共 5 条

[1] GAIN-CURRENT RELATION FOR INO.72GAO.28ASO.6PO.4 LASERS [J].

DUTTA, NK .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) :55-60

[2]

ISHIKAWA H, 1981, ELECTRON LETT, V17, P415

[3] FORMATION OF A LONG-WAVELENGTH BURIED-CRESCENT LASER STRUCTURE ON CHANNELED SUBSTRATES [J].

MURRELL, DL ;

WALLING, RH ;

HOBBS, RE ;

DEVLIN, WJ .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1982, 129 (06) :209-213

[4] LOW THRESHOLD INGAASP-INP BURIED CRESCENT LASER WITH DOUBLE CURRENT CONFINEMENT STRUCTURE [J].

OOMURA, E ;

MUROTANI, T ;

HIGUCHI, H ;

NAMIZAKI, H ;

SUSAKI, W .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) :646-650

[5] OPTIMUM DESIGNS FOR INGAASP/INP (LAMBDA=1.3-MU-M) PLANOCONVEX WAVEGUIDE LASERS UNDER LASING CONDITIONS [J].

UENO, M ;

LANG, R ;

MATSUMOTO, S ;

KAWANO, H ;

FURUSE, T ;

SAKUMA, I .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1982, 129 (06) :218-228

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