CHARGE COLLECTION IN SILICON STRIP DETECTORS

被引：15

作者：

KRANER, HW ^{[1
]}

BEUTTENMULLER, R ^{[1
]}

LUDLAM, T ^{[1
]}

HANSON, AL ^{[1
]}

JONES, KW ^{[1
]}

RADEKA, V ^{[1
]}

HEIJNE, EHM ^{[1
]}

机构：

[1] CERN, CH-1211 GENEVA 23, SWITZERLAND

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1983年 / 30卷 / 01期

关键词：

D O I：

10.1109/TNS.1983.4332300

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：405 / 414

页数：10

共 20 条

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GIORGI, MA
GIVOLETTI, M
MARROCCHESI, PS
MENZIONE, A
PASSUELLO, D
QUAGLIA, M
RISTORI, L
ROLANDI, L
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VINCELLI, ML
[J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 176 (03): : 457 - 460
[2] MULTI ELECTRODE SEMICONDUCTOR-DETECTORS
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[3] BELAU E, 1982, MPIPAEEXPE1104
[4] PROTON MICROPROBE - POWERFUL TOOL FOR NONDESTRUCTIVE TRACE-ELEMENT ANALYSIS
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[J]. NUCLEAR INSTRUMENTS & METHODS, 1979, 165 (03): : 477 - 508
[7] A SILICON STRIP DETECTOR WITH 12-MU-M RESOLUTION
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[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 196 (01): : 149 - 151
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[9] FERBEL T, 1981, OCT P WORKSH FERM
[10] FOX RJ, 1962, IRE T NUCL SCI, VNS9, P213

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