ELECTRONIC-STRUCTURE OF GAAS2

被引：42

作者：

BALASUBRAMANIAN, K

机构：

来源：

关键词：

D O I：

10.1063/1.452996

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：3518 / 3521

页数：4

共 10 条

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[3] ELECTRONIC STATES OF GAAS AND GAAS+
BALASUBRAMANIAN, K
[J]. JOURNAL OF CHEMICAL PHYSICS, 1987, 86 (06) : 3410 - 3413
[4] HOEPFUL RA, 1986, APPL PHYS LETT, V48, P148
[5] ABINITIO RELATIVISTIC EFFECTIVE POTENTIALS WITH SPIN-ORBIT OPERATORS .2. K THROUGH KR
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[6] AN EMPIRICAL PSEUDOPOTENTIAL ANALYSIS OF (100) AND (110) GAAS-ALXGA1-XAS HETEROJUNCTIONS
MARSH, AC
INKSON, JC
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (01): : 43 - 52
[7] OBRIEN SC, 1987, J CHEM PHYS, V86, P3410
[8] GEOMETRY OF THE ABRUPT (110) GE-GAAS INTERFACE
SWARTS, CA
GODDARD, WA
MCGILL, TC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 551 - 555
[9] RECONSTRUCTION OF THE (110) SURFACE OF III - V SEMICONDUCTOR COMPOUNDS
SWARTS, CA
MCGILL, TC
GODDARD, WA
[J]. SURFACE SCIENCE, 1981, 110 (02) : 400 - 414
[10] CONFINED ELECTRON-STATES IN GAAS-GA1-XALXAS (0.2 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 1.0) SUPERLATTICES
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JAROS, M
GELL, MA
NINNO, D
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (01): : 53 - 65