CONFINED ELECTRON-STATES IN GAAS-GA1-XALXAS (0.2 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 1.0) SUPERLATTICES

被引：32

作者：

WONG, KB

JAROS, M

GELL, MA

NINNO, D

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1986年 / 19卷 / 01期

关键词：

D O I：

10.1088/0022-3719/19/1/012

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：53 / 65

页数：13

共 13 条

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[6] ELECTRONIC-STRUCTURE OF GAAS-GA1-XALXAS QUANTUM WELL AND SAWTOOTH SUPERLATTICES
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[J]. PHYSICAL REVIEW B, 1985, 31 (02): : 1205 - 1207
[7] NEW ELECTRON-STATES IN GAAS-GAXAL1-XAS SUPERLATTICE
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (29): : L765 - L769
[8] Jaros M, 1982, DEEP LEVELS SEMICOND
[9] THE ELECTRONIC-STRUCTURE AND STABILITY OF LOCALIZED DEFECTS IN SEMICONDUCTORS .1. THEORY
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (14): : 2475 - 2486
[10] SIZE QUANTIZATION AND BAND-OFFSET DETERMINATION IN GAAS-GAALAS SEPARATE CONFINEMENT HETEROSTRUCTURES
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[J]. PHYSICAL REVIEW B, 1985, 31 (08): : 5539 - 5542

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