共 50 条
[1]
ANALYSIS OF THERMALLY STIMULATED CAPACITOR-DISCHARGE METHOD FOR CHARACTERIZING LOCALIZED STATES IN AMORPHOUS-SEMICONDUCTORS
[J].
PHYSICAL REVIEW B,
1974, 10 (10)
:4340-4350
[3]
AMER NM, 1984, SEMICONDUCT SEMIMET, V21, P83
[5]
COHEN JD, 1984, SEMICONDUCT SEMIMET, V21, P9
[6]
CRANDALL RS, 1984, SEMICONDUCT SEMIMET, V21, P245
[7]
DETERMINATION OF MIDGAP DENSITY OF STATES IN A-SI-H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS
[J].
JOURNAL DE PHYSIQUE,
1981, 42 (NC4)
:451-454
[8]
INFLUENCE OF DANGLING-BOND DEFECTS ON RECOMBINATION IN A-SI-H
[J].
PHYSICAL REVIEW B,
1985, 31 (10)
:6913-6916
[9]
RECOMBINATION PROCESSES IN A-SI-H - SPIN-DEPENDENT PHOTOCONDUCTIVITY
[J].
PHYSICAL REVIEW B,
1983, 28 (08)
:4678-4684