DENSITY OF STATES AND MOBILITY LIFETIME PRODUCT IN HYDROGENATED AMORPHOUS-SILICON, FROM THERMOSTIMULATED CONDUCTIVITY AND PHOTOCONDUCTIVITY MEASUREMENTS

被引:42
作者
ZHU, M [1 ]
FRITZSCHE, H [1 ]
机构
[1] UNIV CHICAGO,JAMES FRANCK INST,CHICAGO,IL 60637
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1986年 / 53卷 / 01期
关键词
D O I
10.1080/13642818608238970
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:41 / 54
页数:14
相关论文
共 50 条
[1]   ANALYSIS OF THERMALLY STIMULATED CAPACITOR-DISCHARGE METHOD FOR CHARACTERIZING LOCALIZED STATES IN AMORPHOUS-SEMICONDUCTORS [J].
AGARWAL, SC .
PHYSICAL REVIEW B, 1974, 10 (10) :4340-4350
[2]   ATTEMPTS TO MEASURE THERMALLY STIMULATED CURRENTS IN CHALCOGENIDE GLASSES [J].
AGARWAL, SC ;
FRITZSCHE, H .
PHYSICAL REVIEW B, 1974, 10 (10) :4351-4357
[3]  
AMER NM, 1984, SEMICONDUCT SEMIMET, V21, P83
[4]   SPACE-CHARGE LIMITED CONDUCTION IN N+NN+ AMORPHOUS HYDROGENATED SILICON FILMS [J].
BHATTACHARYA, E ;
GUHA, S ;
KRISHNA, KV ;
BAPAT, DR .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6285-6288
[5]  
COHEN JD, 1984, SEMICONDUCT SEMIMET, V21, P9
[6]  
CRANDALL RS, 1984, SEMICONDUCT SEMIMET, V21, P245
[7]   DETERMINATION OF MIDGAP DENSITY OF STATES IN A-SI-H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS [J].
DENBOER, W .
JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :451-454
[8]   INFLUENCE OF DANGLING-BOND DEFECTS ON RECOMBINATION IN A-SI-H [J].
DERSCH, H ;
SKUMANICH, A ;
AMER, NM .
PHYSICAL REVIEW B, 1985, 31 (10) :6913-6916
[9]   RECOMBINATION PROCESSES IN A-SI-H - SPIN-DEPENDENT PHOTOCONDUCTIVITY [J].
DERSCH, H ;
SCHWEITZER, L ;
STUKE, J .
PHYSICAL REVIEW B, 1983, 28 (08) :4678-4684