PHOSPHORUS DOPING OF SILICON BY MEANS OF NEUTRON-IRRADIATION

被引：29

作者：

HAAS, EW

SCHNOLLER, MS

机构：

[1] KRAFTWERK UNION AG,RADIOCHEM LAB,ERLANGEN,FED REP GER

[2] SIEMENS AG,D-8000 MUNCHEN 46,FED REP GER

来源：

关键词：

D O I：

10.1109/T-ED.1976.18488

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：803 / 805

页数：3

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[3]

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[4]

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OPDEBEEC.JP .

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[7]

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[10]

SCHNOLLER M, 1973, THESIS FREIBURG