GAP STATE DISTRIBUTION OF HYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOYS

被引：9

作者：

HUANG, CY

GUHA, S

HUDGENS, SJ

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1984年 / 66卷 / 1-2期

关键词：

D O I：

10.1016/0022-3093(84)90319-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：187 / 192

页数：6

共 8 条

[1]

Huang C., UNPUB

[2] STUDY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY TRANSIENT AND STEADY-STATE PHOTOCONDUCTIVITY MEASUREMENTS [J].

HUANG, CY ;

GUHA, S ;

HUDGENS, SJ .

PHYSICAL REVIEW B, 1983, 27 (12) :7460-7465

[3] GAP STATE DISTRIBUTION OF AMORPHOUS HYDROGENATED SI AND SI-GE ALLOYS [J].

HUANG, CY ;

GUHA, S ;

HUDGENS, SJ .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :545-548

[4] ELECTRON-SPIN-RESONANCE AND IR STUDIES ON A-SI1-XGEX-H PREPARED BY GLOW-DISCHARGE DECOMPOSITION [J].

MORIMOTO, A ;

MIURA, T ;

KUMEDA, M ;

SHIMIZU, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) :L833-L836

[5] TANDEM TYPE AMORPHOUS SOLAR-CELLS [J].

NAKAMURA, G ;

SATO, K ;

ISHIHARA, T ;

USUI, M ;

OKANIWA, K ;

YUKIMOTO, Y .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :1111-1114

[6]

Nakamura G., 1982, 16TH P IEEE PHOT SPE, P1331

[7] INTERPRETATION OF TRANSPORT RESULTS IN AMORPHOUS-SILICON [J].

SPEAR, WE ;

ALLAN, D ;

LECOMBER, P ;

GHAITH, A .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :357-362

[8]

[No title captured]

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