ROOM-TEMPERATURE LASER-EMISSION NEAR 2 MU-M FROM AN OPTICALLY PUMPED HGCDTE SEPARATE-CONFINEMENT HETEROSTRUCTURE

被引：14

作者：

BLEUSE, J ^{[1
]}

MAGNEA, N ^{[1
]}

ULMER, L ^{[1
]}

PAUTRAT, JL ^{[1
]}

MARIETTE, H ^{[1
]}

机构：

[1] UNIV GRENOBLE 1,SPECTROMETRIE PHYS LAB,CNRS,URA 08,F-38402 ST MARTIN DHERES,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 117卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90910-B

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Laser emission from a waveguide-embedded Hg0.51Cd0.49Te epilayer is observed from room temperature, under pulsed photoexcitation, down to 150 K. At lower temperatures, carrier trapping by extrinsic defects favours below-gap stimulated photoluminescence (PL) without laser oscillation. Laser threshold photopump powers are in the range from 22 kW cm-2 at 200 K to 70 kW cm-2 at 300 K, which gives a threshold characteristic temperature T0 of the order of 85 K.

引用

页码：1046 / 1049

页数：4

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