SMOOTH VERTICAL ETCHING OF ALGAINP BY CL2 REACTIVE ION-BEAM ETCHING

被引：13

作者：

YOSHIKAWA, T ^{[1
]}

SUGIMOTO, Y ^{[1
]}

YOSHII, H ^{[1
]}

KAWANO, H ^{[1
]}

KOHMOTO, S ^{[1
]}

ASAKAWA, K ^{[1
]}

机构：

[1] NEC CORP LTD,ULSI DEVICE DEV LABS,OTSU,SHIGA 520,JAPAN

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 02期

关键词：

DRY ETCHING; AUGER ELECTRON SPECTROSCOPY; SEMICONDUCTOR TECHNOLOGY;

D O I：

10.1049/el:19930128

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Very smooth vertical etching of AlGaInP is achieved for the first time by Cl2 reactive ion beam etching. The etched depth is precisely controlled (sigma = 22 nm) by simply monitoring the electrode current of the ion accelerating grid, and the etched surface exhibits no contamination except for Cl, as observed by in situ Auger electron spectroscopy. Furthermore, other III-V compound semiconductors, such as AlGaInP/GaInP double heterostructures and InAlAs/InGaAs/InP multilayers, are also etched smoothly and vertically with no steps between the layers on the sidewalls.

引用

页码：190 / 192

页数：3

共 5 条

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ASAKAWA, K
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[2] BOSCH MA, 1981, APPL PHYS LETT, V38, P264, DOI 10.1063/1.92338
[3] LOTHIAN JR, 1992, J VAC SCI TECHNOL B, V10, P161
[4] DRY ETCHING CHARACTERISTICS OF IN1-X-YGAXALYAS ALLOYS IN CCL2F2-AR AND CH4-H2-AR DISCHARGES
PEARTON, SJ
KOPF, RF
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (07) : 535 - 539
[5] SMOOTH AND VERTICAL INP REACTIVE ION-BEAM ETCHING WITH CL2 ECR PLASMA
YOSHIKAWA, T
KOHMOTO, S
OZAKI, M
HAMAO, N
SUGIMOTO, Y
SUGIMOTO, M
ASAKAWA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (5B): : L655 - L657

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