CHARGING DAMAGE FROM PLASMA-ENHANCED TEOS DEPOSITION

被引：76

作者：

CHEUNG, KP

PAI, CS

机构：

[1] AT&T Bell Laboratories, Murray Hill

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 06期

关键词：

D O I：

10.1109/55.790714

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Serious n-channel transistor hot-carrier life-time degradation due to plasma-charging damage during PETEOS deposition is reported for the first time, Contrary to conventional wisdom, a dielectric film thickness dependent damage is observed, A new mechanism for charging-damage during plasma deposition of dielectric is proposed, This new mechanism uses photoconduction to explain why the antennae continue to charge up after a layer of dielectric is deposited on top, Some numerical estimation is provided.

引用

页码：220 / 222

页数：3

共 9 条

[1] USING SEMATECH ELECTRICAL TEST STRUCTURES IN ASSESSING PLASMA-INDUCED DAMAGE IN POLY ETCHING [J].