NEAR-INFRARED OPTICAL-PROPERTIES OF COSI2 THIN-FILMS

被引：23

作者：

DUBOZ, JY ^{[1
]}

BADOZ, PA ^{[1
]}

HENZ, J ^{[1
]}

VONKANEL, H ^{[1
]}

机构：

[1] SWISS FED INST TECHNOL,FESTKORPERPHYS LAB,CH-8093 ZURICH,SWITZERLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 05期

关键词：

D O I：

10.1063/1.346542

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transmission and reflection measurements in the energy range 0.5-1 eV have been performed on thin CoSi2 films grown by molecular-beam epitaxy on Si(111). For film thicknesses above 200 Å, the transmission factor decreases exponentially with film thickness, with an optical attenuation length of 180 Å nearly independent of photon energy. Deviations from this law for film thicknesses below 200 Å are explained by reflection effects. These data, supplemented by reflection measurements, can be fitted by theoretical calculations of the transmission and reflection factors, thus leading to the determination of the CoSi2 optical indexes. The energy dependence of the real and imaginary indexes is found to be consistent with the Drude model. Some interesting aspects of this intraband absorption either in ultrathin films or at low temperature are presented.

引用

页码：2346 / 2350

页数：5

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