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ELECTRICAL-PROPERTIES OF THE SIO2-HGCDTE INTERFACE

被引：34
作者：
WILSON, JA
COTTON, VA
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1985年 / 3卷 / 01期
关键词：
D O I：
10.1116/1.573200
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：199 / 202
页数：4
相关论文
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