COMPOSITIONAL MICROCHARACTERIZATION OF ELECTRICALLY ACTIVE AND CHEMICALLY PASSIVATED SILICON GRAIN-BOUNDARIES

[1] ELECTRONIC PROCESSES AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SEMICONDUCTORS UNDER OPTICAL ILLUMINATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 397 - 402

[2] DIRECTIONALLY SOLIDIFIED SOLAR-GRADE SILICON USING CARBON CRUCIBLES [J]. JOURNAL OF CRYSTAL GROWTH, 1979, 46 (04) : 527 - 533

[3] DUBE C, 1983, APPL PHYS LETT, V44, P425

[4] Fahrenbruck A. L., 1983, FUNDAMENTALS SOLAR C

[5] THEORY OF GRAIN-BOUNDARY AND INTRAGRAIN RECOMBINATION CURRENTS IN POLYSILICON P-N-JUNCTION SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) : 692 - 700

[6] HYDROGEN PASSIVATION OF DEFECTS IN SILICON RIBBON GROWN BY THE EDGE-DEFINED FILM-FED GROWTH-PROCESS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 618 - 620

[7] ELECTRON-BEAM-INDUCED CURRENTS IN SEMICONDUCTORS [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1981, 11 : 353 - 380

[8] TRANSITION WITH GRAIN-SIZE FROM ELECTRODE-LIMITED TO BULK-LIMITED CONDUCTION IN POLYCRYSTALLINE SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 315 - 317

[9] Kazmerski L. L., 1980, Polycrystalline and amorphous thin films and devices, P59

[10] EVIDENCE FOR THE SEGREGATION OF IMPURITIES TO GRAIN-BOUNDARIES IN MULTIGRAINED SILICON USING AUGER-ELECTRON SPECTROSCOPY AND SECONDARY ION MASS-SPECTROSCOPY [J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 323 - 325

[1] ELECTRONIC PROCESSES AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SEMICONDUCTORS UNDER OPTICAL ILLUMINATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 397 - 402

[2] DIRECTIONALLY SOLIDIFIED SOLAR-GRADE SILICON USING CARBON CRUCIBLES [J]. JOURNAL OF CRYSTAL GROWTH, 1979, 46 (04) : 527 - 533

[3] DUBE C, 1983, APPL PHYS LETT, V44, P425

[4] Fahrenbruck A. L., 1983, FUNDAMENTALS SOLAR C

[5] THEORY OF GRAIN-BOUNDARY AND INTRAGRAIN RECOMBINATION CURRENTS IN POLYSILICON P-N-JUNCTION SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (04) : 692 - 700

[6] HYDROGEN PASSIVATION OF DEFECTS IN SILICON RIBBON GROWN BY THE EDGE-DEFINED FILM-FED GROWTH-PROCESS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 618 - 620

[7] ELECTRON-BEAM-INDUCED CURRENTS IN SEMICONDUCTORS [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1981, 11 : 353 - 380

[8] TRANSITION WITH GRAIN-SIZE FROM ELECTRODE-LIMITED TO BULK-LIMITED CONDUCTION IN POLYCRYSTALLINE SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 315 - 317

[9] Kazmerski L. L., 1980, Polycrystalline and amorphous thin films and devices, P59

[10] EVIDENCE FOR THE SEGREGATION OF IMPURITIES TO GRAIN-BOUNDARIES IN MULTIGRAINED SILICON USING AUGER-ELECTRON SPECTROSCOPY AND SECONDARY ION MASS-SPECTROSCOPY [J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 323 - 325